Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

10.1103/PhysRevB.82.024102

Saved in:
Bibliographic Details
Main Authors: Ke, Q., Lou, X., Wang, Y., Wang, J.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86622
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Be the first to leave a comment!
You must be logged in first

Similar Items