Oxygen-vacancy-related relaxation and scaling behaviors of Bi 0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films
10.1103/PhysRevB.82.024102
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Main Authors: | Ke, Q., Lou, X., Wang, Y., Wang, J. |
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Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86622 |
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Institution: | National University of Singapore |
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