Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe

10.1063/1.2762277

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Bibliographic Details
Main Authors: Mi, Y.Y., Wang, S.J., Chai, J.W., Seng, H.L., Pan, J.S., Foo, Y.L., Huan, C.H.A., Ong, C.K.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96313
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Institution: National University of Singapore