Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe

• Main Authors: Mi, Y.Y., Wang, S.J., Chai, J.W., Seng, H.L., Pan, J.S., Foo, Y.L., Huan, C.H.A., Ong, C.K.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/96313
• Institution: National University of Singapore

10.1063/1.2762277