Raman shift and broadening in stress-minimized Ge nanocrystals in silicon oxide matrix

Raman shift and broadening in stress-minimized Ge nanocrystals in silicon oxide matrix

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Jie, Y.X., Huan, Cha, Wee, A.T.S., Shen, Z.X.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97736
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Institution: National University of Singapore
Description
Summary:Materials Research Society Symposium - Proceedings

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