Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters

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Bibliographic Details
Main Authors: Huang, Y.S., Sun, W.D., Malikova, L., Pollak, F.H., Ferguson, I., Hou, H., Feng, Z.C., Ryan, T., Fantner, E.B.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97845
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Institution: National University of Singapore
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Summary:Applied Physics Letters

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