Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

• Main Authors: Huang, Y.S., Sun, W.D., Malikova, L., Pollak, F.H., Ferguson, I., Hou, H., Feng, Z.C., Ryan, T., Fantner, E.B.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/97845
• Institution: National University of Singapore

Applied Physics Letters