Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Applied Physics Letters

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Main Authors:	Huang, Y.S., Sun, W.D., Malikova, L., Pollak, F.H., Ferguson, I., Hou, H., Feng, Z.C., Ryan, T., Fantner, E.B.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/97845
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-978452015-02-24T13:54:45Z Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure Huang, Y.S. Sun, W.D. Malikova, L. Pollak, F.H. Ferguson, I. Hou, H. Feng, Z.C. Ryan, T. Fantner, E.B. PHYSICS Applied Physics Letters 74 13 1851-1853 APPLA 2014-10-16T09:40:00Z 2014-10-16T09:40:00Z 1999-03-29 Article Huang, Y.S.,Sun, W.D.,Malikova, L.,Pollak, F.H.,Ferguson, I.,Hou, H.,Feng, Z.C.,Ryan, T.,Fantner, E.B. (1999-03-29). Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure. Applied Physics Letters 74 (13) : 1851-1853. ScholarBank@NUS Repository. 00036951 http://scholarbank.nus.edu.sg/handle/10635/97845 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Applied Physics Letters
author2	PHYSICS
author_facet	PHYSICS Huang, Y.S. Sun, W.D. Malikova, L. Pollak, F.H. Ferguson, I. Hou, H. Feng, Z.C. Ryan, T. Fantner, E.B.
format	Article
author	Huang, Y.S. Sun, W.D. Malikova, L. Pollak, F.H. Ferguson, I. Hou, H. Feng, Z.C. Ryan, T. Fantner, E.B.
spellingShingle	Huang, Y.S. Sun, W.D. Malikova, L. Pollak, F.H. Ferguson, I. Hou, H. Feng, Z.C. Ryan, T. Fantner, E.B. Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
author_sort	Huang, Y.S.
title	Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
title_short	Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
title_full	Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
title_fullStr	Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
title_full_unstemmed	Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure
title_sort	room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped gaalas/ingaas high electron mobility transistor structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/97845
_version_	1681091915777310720

Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

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