Transient capacitance measurements of laser radiation-induced defects in silicon
10.1088/0268-1242/5/7/004
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sg-nus-scholar.10635-984332023-10-25T07:40:44Z Transient capacitance measurements of laser radiation-induced defects in silicon Tan, H.S. Ng, S.C. Woon, H.S. Hultquist, G. PHYSICS 10.1088/0268-1242/5/7/004 Semiconductor Science and Technology 5 7 657-662 SSTEE 2014-10-16T09:47:02Z 2014-10-16T09:47:02Z 1990-07 Article Tan, H.S., Ng, S.C., Woon, H.S., Hultquist, G. (1990-07). Transient capacitance measurements of laser radiation-induced defects in silicon. Semiconductor Science and Technology 5 (7) : 657-662. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/5/7/004 02681242 http://scholarbank.nus.edu.sg/handle/10635/98433 A1990DN38100004 Scopus |
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PHYSICS Tan, H.S. Ng, S.C. Woon, H.S. Hultquist, G. |
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Tan, H.S. Ng, S.C. Woon, H.S. Hultquist, G. |
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Tan, H.S. Ng, S.C. Woon, H.S. Hultquist, G. Transient capacitance measurements of laser radiation-induced defects in silicon |
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Tan, H.S. |
title |
Transient capacitance measurements of laser radiation-induced defects in silicon |
title_short |
Transient capacitance measurements of laser radiation-induced defects in silicon |
title_full |
Transient capacitance measurements of laser radiation-induced defects in silicon |
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Transient capacitance measurements of laser radiation-induced defects in silicon |
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Transient capacitance measurements of laser radiation-induced defects in silicon |
title_sort |
transient capacitance measurements of laser radiation-induced defects in silicon |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/98433 |
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