Transient capacitance measurements of laser radiation-induced defects in silicon

10.1088/0268-1242/5/7/004

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Main Authors: Tan, H.S., Ng, S.C., Woon, H.S., Hultquist, G.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98433
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-984332023-10-25T07:40:44Z Transient capacitance measurements of laser radiation-induced defects in silicon Tan, H.S. Ng, S.C. Woon, H.S. Hultquist, G. PHYSICS 10.1088/0268-1242/5/7/004 Semiconductor Science and Technology 5 7 657-662 SSTEE 2014-10-16T09:47:02Z 2014-10-16T09:47:02Z 1990-07 Article Tan, H.S., Ng, S.C., Woon, H.S., Hultquist, G. (1990-07). Transient capacitance measurements of laser radiation-induced defects in silicon. Semiconductor Science and Technology 5 (7) : 657-662. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/5/7/004 02681242 http://scholarbank.nus.edu.sg/handle/10635/98433 A1990DN38100004 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0268-1242/5/7/004
author2 PHYSICS
author_facet PHYSICS
Tan, H.S.
Ng, S.C.
Woon, H.S.
Hultquist, G.
format Article
author Tan, H.S.
Ng, S.C.
Woon, H.S.
Hultquist, G.
spellingShingle Tan, H.S.
Ng, S.C.
Woon, H.S.
Hultquist, G.
Transient capacitance measurements of laser radiation-induced defects in silicon
author_sort Tan, H.S.
title Transient capacitance measurements of laser radiation-induced defects in silicon
title_short Transient capacitance measurements of laser radiation-induced defects in silicon
title_full Transient capacitance measurements of laser radiation-induced defects in silicon
title_fullStr Transient capacitance measurements of laser radiation-induced defects in silicon
title_full_unstemmed Transient capacitance measurements of laser radiation-induced defects in silicon
title_sort transient capacitance measurements of laser radiation-induced defects in silicon
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/98433
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