The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

10.1016/j.mseb.2004.12.023

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Bibliographic Details
Main Authors: Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Epitaxial ZrO2
Pulsed laser deposition
X-ray photoelectron spectroscopy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98921
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/98921

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