The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

10.1016/j.mseb.2004.12.023

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Bibliographic Details
Main Authors:	Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K.
Other Authors:	PHYSICS
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Epitaxial ZrO2 Pulsed laser deposition X-ray photoelectron spectroscopy
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/98921
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-98921
record_format	dspace
spelling	sg-nus-scholar.10635-989212023-10-25T22:26:43Z The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations Wang, S.J. Dong, Y.F. Huan, C.H.A. Feng, Y.P. Ong, C.K. PHYSICS Epitaxial ZrO2 Pulsed laser deposition X-ray photoelectron spectroscopy 10.1016/j.mseb.2004.12.023 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 1-3 122-126 MSBTE 2014-10-16T09:53:04Z 2014-10-16T09:53:04Z 2005-04-25 Conference Paper Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2005-04-25). The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 (1-3) : 122-126. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.12.023 09215107 http://scholarbank.nus.edu.sg/handle/10635/98921 000228514800026 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Epitaxial ZrO2 Pulsed laser deposition X-ray photoelectron spectroscopy
spellingShingle	Epitaxial ZrO2 Pulsed laser deposition X-ray photoelectron spectroscopy Wang, S.J. Dong, Y.F. Huan, C.H.A. Feng, Y.P. Ong, C.K. The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
description	10.1016/j.mseb.2004.12.023
author2	PHYSICS
author_facet	PHYSICS Wang, S.J. Dong, Y.F. Huan, C.H.A. Feng, Y.P. Ong, C.K.
format	Conference or Workshop Item
author	Wang, S.J. Dong, Y.F. Huan, C.H.A. Feng, Y.P. Ong, C.K.
author_sort	Wang, S.J.
title	The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
title_short	The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
title_full	The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
title_fullStr	The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
title_full_unstemmed	The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
title_sort	epitaxial zro2 on silicon as alternative gate dielectric: film growth, characterization and electronic structure calculations
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/98921
_version_	1781786974830460928

The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

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