The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations

10.1016/j.mseb.2004.12.023

Saved in:
Bibliographic Details
Main Authors: Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Epitaxial ZrO2
Pulsed laser deposition
X-ray photoelectron spectroscopy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98921
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1016/j.mseb.2004.12.023

Similar Items