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Qualifying ultrathin alumina film prepared by plasma-enhance atomic layer deposition under low temperature operation

© 2017 Elsevier B.V. Preparation of ultrathin alumina (Al 2 O 3 ) films through Plasma-Enhanced Atomic Layer Deposition (PE-ALD) at low substrate temperature is discussed. The present work aims to investigate the physical mechanism of the PE-ALD deposition process and also the characteristics of the...

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書目詳細資料
Main Authors: Bootkul D., Jitsopakul P., Intarasiri S., Boonyawan D.
格式: 雜誌
出版: 2017
在線閱讀:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85029359113&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/40079
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機構: Chiang Mai University