Fabrication of 90° wall of {100} plane on (100) Si by NaOH solution via design of experiments

The experimental trials were conducted by design of experiments (DOE) technique to find an anisotropic wet etching condition that achieves 90° wall angle on silicon (100) orientation wafer. Three considered factors assigned to the DOE were NaOH concentration, solution temperature, and stirring speed...

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Bibliographic Details
Main Authors: Chupong Pakpum, Nirut Pussadee
Format: Book Series
Published: 2018
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84898902835&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/45495
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Institution: Chiang Mai University
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