Ion beam synthesis of silicon carbide
Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400°C, respectively, using do...
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| Main Authors: | , , , , |
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| 格式: | Conference or Workshop Item |
| 語言: | English |
| 出版: |
2014
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| 在線閱讀: | http://www.scopus.com/inward/record.url?eid=2-s2.0-24944434772&partnerID=40&md5=cd472d1ef39f2f96f05807ffa450c1a4 http://cmuir.cmu.ac.th/handle/6653943832/4944 |
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| 機構: | Chiang Mai University |
| 語言: | English |