Ion beam synthesis of silicon carbide
Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400°C, respectively, using do...
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| 格式: | Book Series |
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2018
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| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=24944434772&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/62283 |
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