Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C 12 + implant...

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Bibliographic Details
Main Authors: S. Intarasiri, L. D. Yu, S. Singkarat, A. Hallán, J. Lu, M. Ottosson, J. Jensen, G. Possnert
Format: Journal
Published: 2018
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Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34247585163&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/61390
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Institution: Chiang Mai University