Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering
© 2015 IOP Publishing Ltd. Utilizing plasma-assisted deposition by combining an RF magnetron and an inductively coupled plasma (ICP) source it is possible to fabricate highly crystallized nc-Si:H films at a relatively low substrate temperature (300 °C). Microstructural analysis reveals enhancement i...
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th-cmuir.6653943832-545982018-09-04T10:25:37Z Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering Kyung Sik Shin Bibhuti Bhusan Sahu Manish Kumar Komgrit Leksakul Jeon Geon Han Materials Science Physics and Astronomy © 2015 IOP Publishing Ltd. Utilizing plasma-assisted deposition by combining an RF magnetron and an inductively coupled plasma (ICP) source it is possible to fabricate highly crystallized nc-Si:H films at a relatively low substrate temperature (300 °C). Microstructural analysis reveals enhancement in crystallinity along with (2 2 0) preferential orientation throughout the depth of the film. The possible mechanism of crystallinity enhancement and preferential orientation is presented on the basis of plasma diagnostics using optical emission spectroscopy and various film analysis tools. This work also reports the effectiveness of the ICP source and elevated temperature for the control of film microstructure and crystallinity. 2018-09-04T10:17:33Z 2018-09-04T10:17:33Z 2015-10-26 Journal 13616463 00223727 2-s2.0-84947093700 10.1088/0022-3727/48/47/475303 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84947093700&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/54598 |
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Materials Science Physics and Astronomy Kyung Sik Shin Bibhuti Bhusan Sahu Manish Kumar Komgrit Leksakul Jeon Geon Han Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
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© 2015 IOP Publishing Ltd. Utilizing plasma-assisted deposition by combining an RF magnetron and an inductively coupled plasma (ICP) source it is possible to fabricate highly crystallized nc-Si:H films at a relatively low substrate temperature (300 °C). Microstructural analysis reveals enhancement in crystallinity along with (2 2 0) preferential orientation throughout the depth of the film. The possible mechanism of crystallinity enhancement and preferential orientation is presented on the basis of plasma diagnostics using optical emission spectroscopy and various film analysis tools. This work also reports the effectiveness of the ICP source and elevated temperature for the control of film microstructure and crystallinity. |
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Journal |
author |
Kyung Sik Shin Bibhuti Bhusan Sahu Manish Kumar Komgrit Leksakul Jeon Geon Han |
author_facet |
Kyung Sik Shin Bibhuti Bhusan Sahu Manish Kumar Komgrit Leksakul Jeon Geon Han |
author_sort |
Kyung Sik Shin |
title |
Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
title_short |
Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
title_full |
Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
title_fullStr |
Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
title_full_unstemmed |
Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering |
title_sort |
tailoring of microstructure in hydrogenated nanocrystalline si thin films by icp-assisted rf magnetron sputtering |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84947093700&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/54598 |
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