Schottky barrier height engineering of ti/n-type silicon diode by means of ion implantation
© 2018, Walailak University. All rights reserved. Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6×1012cm-2at the energy of 25 keV were fabricated wi...
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| Main Authors: | , , , , |
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| 格式: | 雜誌 |
| 出版: |
2018
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| 主題: | |
| 在線閱讀: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85052384085&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/59194 |
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| 機構: | Chiang Mai University |