Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition

Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was...

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Main Authors: Sakon Sansongsiri, André Anders, Banchob Yotsombat
Format: Journal
Published: 2018
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http://cmuir.cmu.ac.th/jspui/handle/6653943832/60236
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-602362018-09-10T03:43:49Z Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition Sakon Sansongsiri André Anders Banchob Yotsombat Chemistry Engineering Materials Science Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300-515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8-28 nm. Film resistivity varied from 3.55 × 10- 4 Ω m to 2.27 × 10- 6 Ω m when the Mo/C pulse ratio was increased from 0.05 to 0.4, with no substrate bias applied. With carbon-selective bias, the film resistivity was in the range of 4.59 × 10- 2and 4.05 Ω m at a Mo/C pulse ratio of 0.05. The electrical activation energy decreased from 3.80 × 10- 2to 3.36 × 10- 4 eV when the Mo/C pulse ratio was increased in the absence of bias, and from 0.19 to 0.14 eV for carbon-selective bias conditions. The resistivity of the film shifts systematically with the amounts of Mo and upon application of substrate bias voltage. The intensity ratio of the Raman D-peak and G-peak (ID/IG) correlated with the pre-exponential factor (σ0) which included charge carrier density and density of states. © 2008 Elsevier B.V. 2018-09-10T03:39:42Z 2018-09-10T03:39:42Z 2008-12-01 Journal 09259635 2-s2.0-54049095861 10.1016/j.diamond.2008.07.006 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=54049095861&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60236
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Chemistry
Engineering
Materials Science
spellingShingle Chemistry
Engineering
Materials Science
Sakon Sansongsiri
André Anders
Banchob Yotsombat
Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
description Molybdenum-containing amorphous carbon (a-C:Mo) thin films were prepared using a dual-cathode filtered cathodic arc plasma source with a molybdenum and a carbon (graphite) cathode. The Mo content in the films was controlled by varying the deposition pulse ratio of Mo and C. Film sheet resistance was measured in situ at process temperature, which was close to room temperature, as well as ex situ as a function of temperature (300-515 K) in ambient air. Film resistivity and electrical activation energy were derived for different Mo and C ratios and substrate bias. Film thickness was in the range 8-28 nm. Film resistivity varied from 3.55 × 10- 4 Ω m to 2.27 × 10- 6 Ω m when the Mo/C pulse ratio was increased from 0.05 to 0.4, with no substrate bias applied. With carbon-selective bias, the film resistivity was in the range of 4.59 × 10- 2and 4.05 Ω m at a Mo/C pulse ratio of 0.05. The electrical activation energy decreased from 3.80 × 10- 2to 3.36 × 10- 4 eV when the Mo/C pulse ratio was increased in the absence of bias, and from 0.19 to 0.14 eV for carbon-selective bias conditions. The resistivity of the film shifts systematically with the amounts of Mo and upon application of substrate bias voltage. The intensity ratio of the Raman D-peak and G-peak (ID/IG) correlated with the pre-exponential factor (σ0) which included charge carrier density and density of states. © 2008 Elsevier B.V.
format Journal
author Sakon Sansongsiri
André Anders
Banchob Yotsombat
author_facet Sakon Sansongsiri
André Anders
Banchob Yotsombat
author_sort Sakon Sansongsiri
title Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
title_short Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
title_full Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
title_fullStr Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
title_full_unstemmed Electrical properties of a-C: Mo films produced by dual-cathode filtered cathodic arc plasma deposition
title_sort electrical properties of a-c: mo films produced by dual-cathode filtered cathodic arc plasma deposition
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=54049095861&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60236
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