Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory
Recently, the temperature increment in magnetic tunnel junction (MTJ) nanopillars with relevant current induced magnetization switching for spin transfer torque magnetic random access memory (STT-MRAM) has become interesting because it affects the reliability of devices. In this work, the magnetic s...
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Main Authors: | , , , , |
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語言: | English |
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Science Faculty of Chiang Mai University
2019
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在線閱讀: | http://it.science.cmu.ac.th/ejournal/dl.php?journal_id=5770 http://cmuir.cmu.ac.th/jspui/handle/6653943832/66817 |
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