Storage Reliability and Temperature Increment with Tilted Free Layer Magnetization in Nanopillars for Spin Torque Magnetic Memory

Recently, the temperature increment in magnetic tunnel junction (MTJ) nanopillars with relevant current induced magnetization switching for spin transfer torque magnetic random access memory (STT-MRAM) has become interesting because it affects the reliability of devices. In this work, the magnetic s...

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Bibliographic Details
Main Authors: Chayada Surawanitkun", Arkom Kaewrawang, Roong Sivaratana, Anan Kruesubthaworn, Apirat Siritaratiwat
Language:English
Published: Science Faculty of Chiang Mai University 2019
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Online Access:http://it.science.cmu.ac.th/ejournal/dl.php?journal_id=5770
http://cmuir.cmu.ac.th/jspui/handle/6653943832/66817
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Institution: Chiang Mai University
Language: English

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