EXTENT: enabling approximation-oriented energy efficient STT-RAM write circuit

EXTENT: enabling approximation-oriented energy efficient STT-RAM write circuit

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in...

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Bibliographic Details
Main Authors: Seyedfaraji, Saeed, Daryani, Javad Talafy, Mohamed M. Sabry Aly, Rehman, Semeen
Other Authors: School of Computer Science and Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Computer science and engineering
Magnetic Tunnel Junction
Multimedia Application
Online Access:https://hdl.handle.net/10356/164998
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/164998

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