EXTENT: enabling approximation-oriented energy efficient STT-RAM write circuit
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in...
Saved in:
Main Authors: | Seyedfaraji, Saeed, Daryani, Javad Talafy, Mohamed M. Sabry Aly, Rehman, Semeen |
---|---|
Other Authors: | School of Computer Science and Engineering |
Format: | Article |
Language: | English |
Published: |
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/164998 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
STT-RAM cache hierarchy with multiretention MTJ designs
by: Sun, Z., et al.
Published: (2016) -
Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
by: Pan, Haiyang, et al.
Published: (2024) -
Passivating contact-based tunnel junction Si solar cells using machine learning for tandem cell applications
by: Park, Hyunjung, et al.
Published: (2024) -
An adapted tunneling model for MgO-based magnetic tunneling junctions
by: Chen, B.J., et al.
Published: (2014) -
DEVELOPMENT OF POLYSILICON-BASED TUNNEL JUNCTIONS FOR TWO-TERMINAL SILICON-BASED TANDEM SOLAR CELLS
by: NG XIN REN SAMUEL
Published: (2021)