EXTENT: enabling approximation-oriented energy efficient STT-RAM write circuit

• Main Authors: Seyedfaraji, Saeed, Daryani, Javad Talafy, Mohamed M. Sabry Aly, Rehman, Semeen
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Computer science and engineering; Magnetic Tunnel Junction; Multimedia Application
• Online Access: https://hdl.handle.net/10356/164998
• Institution: Nanyang Technological University

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in...