Effect of defect sites in charge carrier mobility enhancement of hopping model

Charge carrier mobility in disorder materials was described by hopping model and the increasing in the mobility value of existing defect or impurity sites was investigated by Monte Carlo simulation of the rectangular hopping site. In the case of equal tunneling rate, the mobility value increases whe...

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Bibliographic Details
Main Authors: T. Osotchan, S. Pengmanayol
Other Authors: Mahidol University
Format: Conference or Workshop Item
Published: 2018
Subjects:
Online Access:https://repository.li.mahidol.ac.th/handle/123456789/27545
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Institution: Mahidol University

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