Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan
منشور في 2015

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

بواسطة Ye, G., Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Bryan, Maung Ye Kyaw Thu, Foo, Siew Chuen
منشور في 2014

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

بواسطة Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip
منشور في 2024