Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

by Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Published 2014

Early stratification of radiotherapy response by activatable inflammation magnetic resonance imaging

by Zhou, Z, Deng, H, Yang, W, Wang, Z, Lin, L, Munasinghe, J, Jacobson, O, Liu, Y, Tang, L, Ni, Q, Kang, F, Liu, Y, Niu, G, Bai, R, Qian, C, Song, J, Chen, X
Published 2022