Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

by Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
Published 2011

Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2

by Lee, Y.K., Maung Latt, K., Li, S., Osipowicz, T., Chiam, S.Y.
Published 2014

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2

by Lee, Y.K., Maung Latt, K., Jaehyung, K., Osipowicz, T., Lee, K.
Published 2014

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

by Maung Latt, K., Park, H.S., Li, S., Rong, L., Osipowicz, T., Zhu, W.G., Lee, Y.K.
Published 2014