SIMULATION OF INTERMEDIATE BAND SOLAR CELL CHARACTERISTIC USE InAs QUANTUM DOTS ARRANGED IN GaAs MATERIAL

• Main Author: BAGUS HENDRA PRASTIAWAN (NIM : 10208076); Pembimbing : Dr. Eng. Yudi Darma, IDA
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/15976
• Institution: Institut Teknologi Bandung

Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. Intermediate band can promote wider spectrum of light for higher photocurrent generation. One way to create intermediate band is by proposing quantum dots (QD) technology. The arrangement of QD in barrier materials (bulk materials) between p-n junction can form intermediate band inside barrier material bandgap. In this work we used InAs (Indium Arsenide) as quantum dots and GaAs (Galium Arsenide) as barrier materials. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We simulated the influence of increasing quantum dot size to capture wider spectrum of light. We compared absorption coefficient profile between GaAs bulk and GaAs with InAs quantum dots. We calculated the efficiency of GaAs bulk and GaAs with 2, 5, and 10 nm InAs quantum dots . Effective distances in quantum dots arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9% initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave function overlaping.