STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dekta...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/1838 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dektak HA, X-Ray Difractometer and Scanning Electron Microscopy. The thin film prodused gave single crystalline with orientation (0002) and (0004) that shown the wurtzite structure. For film grown at 680°C, we obtained an FWHM of 0,4°. The surface morphology showed film growning as isolated islands. |
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