STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION

STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION

GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dekta...

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Main Author: WIDIYANDARI , HENDRI
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/1838
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:1838
spelling id-itb.:18382004-11-23T10:28:53ZSTUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION WIDIYANDARI , HENDRI Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/1838 GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dektak HA, X-Ray Difractometer and Scanning Electron Microscopy. The thin film prodused gave single crystalline with orientation (0002) and (0004) that shown the wurtzite structure. For film grown at 680°C, we obtained an FWHM of 0,4°. The surface morphology showed film growning as isolated islands. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description GaN thin film has been grown on sapphire (0001) substrate using a pulsed laser deposition technique. The N2 gass with 100 sccm flow rate, is used to keep the thin film stoichiometric. The growth temperature was varied from 650°C, 680°C to 700°C. GaN film was analized by mean of Profilometer Dektak HA, X-Ray Difractometer and Scanning Electron Microscopy. The thin film prodused gave single crystalline with orientation (0002) and (0004) that shown the wurtzite structure. For film grown at 680°C, we obtained an FWHM of 0,4°. The surface morphology showed film growning as isolated islands.
format Theses
author WIDIYANDARI , HENDRI
spellingShingle WIDIYANDARI , HENDRI
STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
author_facet WIDIYANDARI , HENDRI
author_sort WIDIYANDARI , HENDRI
title STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
title_short STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
title_full STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
title_fullStr STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
title_full_unstemmed STUDI PENGARUH TEMPEI ATUR PENUMBUHAN TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN TEKNIK PULSED LASER DEPOSITION
title_sort studi pengaruh tempei atur penumbuhan terhadap kualitas film tipis gan ditumbuhkan dengan teknik pulsed laser deposition
url https://digilib.itb.ac.id/gdl/view/1838
_version_ 1820663077179228160

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