ELECTRICAL PROPERTIES OF METAL INSULATOR SEMICONDUCTOR (MIS) STRUCTURE COMPRISE OF CARBON BASED THIN FILM ON Al2O3/Si
The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been investigated and studied. The carbon based thin film is deposited through Argon plasma DC unbalanced magnetron sputtering technique using Fe doped carb...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/20164 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been investigated and studied. The carbon based thin film is deposited through Argon plasma DC unbalanced magnetron sputtering technique using Fe doped carbon pellet. The carbon thin film have been investigated using XRD, FTIR, Optic Microscopy, SEM/EDS, and Raman Spectra. Electrical properties of this structure have been analyzed through I-V characteristics measurements using in-plane and cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al2O3. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al2O3 have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices. |
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