ELECTRICAL PROPERTIES OF METAL INSULATOR SEMICONDUCTOR (MIS) STRUCTURE COMPRISE OF CARBON BASED THIN FILM ON Al2O3/Si

• المؤلف الرئيسي: HELDI ALFIADI (NIM : 10210004); Pembimbing : Dr. Eng. Yudi Darma
• التنسيق: Final Project
• اللغة: Indonesia
• الوصول للمادة أونلاين: https://digilib.itb.ac.id/gdl/view/20164
• المؤسسة: Institut Teknologi Bandung

The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been investigated and studied. The carbon based thin film is deposited through Argon plasma DC unbalanced magnetron sputtering technique using Fe doped carb...