MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
Molecular dynamics simulation have been applied to study the mechanism of copper film growth on silicon substrate and annealing process. Interaction potential Meam is used to describe the interaction of Cu-Cu, Si-Si and Cu-Si. In particular, deposition rate, annealing temperature and diffusion time...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/24001 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Molecular dynamics simulation have been applied to study the mechanism of copper film growth on silicon substrate and annealing process. Interaction potential Meam is used to describe the interaction of Cu-Cu, Si-Si and Cu-Si. In particular, deposition rate, annealing temperature and diffusion time are investigated in detail. It is known that annealing temperature and diffusion time have a significant effect on recrystallization process. In addition, it is found that 700 K is minimum temperature for recrystallization process. Analysis of crystalline structure shows that the crystalline structure percentage is increased as temperature increases. The copper film, with different thickness 0,93; 1,97 & 2,73 nm, need different diffusion time for recrystallization process. From our result, it is concluded that temperatures of 700, 800 & 900 K are recommended for annealing temperature parameter. It is also shown that the atomic diffusion, for recrystallization process, is occurred in picosecond. |
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