MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION

MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION

Molecular dynamics simulation have been applied to study the mechanism of copper film growth on silicon substrate and annealing process. Interaction potential Meam is used to describe the interaction of Cu-Cu, Si-Si and Cu-Si. In particular, deposition rate, annealing temperature and diffusion time...

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Main Author: MARIMPUL (NIM : 20214029), RINALDO
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/24001
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:24001
spelling id-itb.:240012017-09-27T14:41:05ZMOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION MARIMPUL (NIM : 20214029), RINALDO Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/24001 Molecular dynamics simulation have been applied to study the mechanism of copper film growth on silicon substrate and annealing process. Interaction potential Meam is used to describe the interaction of Cu-Cu, Si-Si and Cu-Si. In particular, deposition rate, annealing temperature and diffusion time are investigated in detail. It is known that annealing temperature and diffusion time have a significant effect on recrystallization process. In addition, it is found that 700 K is minimum temperature for recrystallization process. Analysis of crystalline structure shows that the crystalline structure percentage is increased as temperature increases. The copper film, with different thickness 0,93; 1,97 & 2,73 nm, need different diffusion time for recrystallization process. From our result, it is concluded that temperatures of 700, 800 & 900 K are recommended for annealing temperature parameter. It is also shown that the atomic diffusion, for recrystallization process, is occurred in picosecond. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
description Molecular dynamics simulation have been applied to study the mechanism of copper film growth on silicon substrate and annealing process. Interaction potential Meam is used to describe the interaction of Cu-Cu, Si-Si and Cu-Si. In particular, deposition rate, annealing temperature and diffusion time are investigated in detail. It is known that annealing temperature and diffusion time have a significant effect on recrystallization process. In addition, it is found that 700 K is minimum temperature for recrystallization process. Analysis of crystalline structure shows that the crystalline structure percentage is increased as temperature increases. The copper film, with different thickness 0,93; 1,97 & 2,73 nm, need different diffusion time for recrystallization process. From our result, it is concluded that temperatures of 700, 800 & 900 K are recommended for annealing temperature parameter. It is also shown that the atomic diffusion, for recrystallization process, is occurred in picosecond.
format Theses
author MARIMPUL (NIM : 20214029), RINALDO
spellingShingle MARIMPUL (NIM : 20214029), RINALDO
MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
author_facet MARIMPUL (NIM : 20214029), RINALDO
author_sort MARIMPUL (NIM : 20214029), RINALDO
title MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
title_short MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
title_full MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
title_fullStr MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
title_full_unstemmed MOLECULAR DYNAMICS SIMULATION STUDY OF METAL CATALYST FILM GROWTH PROCESS BY EVAPORATION METHOD AND ANNEALING FOR GRAPHENE DEPOSITION CATALYST APPLICATION
title_sort molecular dynamics simulation study of metal catalyst film growth process by evaporation method and annealing for graphene deposition catalyst application
url https://digilib.itb.ac.id/gdl/view/24001
_version_ 1822921086004625408

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