THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several...
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| Format: | Final Project |
| Language: | Indonesia |
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| Online Access: | https://digilib.itb.ac.id/gdl/view/30114 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several field such as optoelectronics. Optoelectronics is a branch of technology that combines electronics and light. In this research, Sn doped ZnO thin film was grown by DC Unbalanced Magnetron Sputtering technique. In this final project report 1, there will be discussed about some characterisation methods such as scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), spectroscopy ellipsometry (SE) and UV-Vis spectroscopy. In the last chapter, some of the data and the future plan to finish this final project will be shown. |
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