THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD

ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several...

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Bibliographic Details
Main Author: ICHWAN (NIM : 10214087), RAFI
Format: Final Project
Language:Indonesia
Subjects:
Online Access:https://digilib.itb.ac.id/gdl/view/30114
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Institution: Institut Teknologi Bandung
Language: Indonesia
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