THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD

THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD

ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several...

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Main Author: ICHWAN (NIM : 10214087), RAFI
Format: Final Project
Language:Indonesia
Subjects:
Fisika
Online Access:https://digilib.itb.ac.id/gdl/view/30114
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Institution: Institut Teknologi Bandung
Language: Indonesia
id id-itb.:30114
spelling id-itb.:301142018-09-03T08:59:01ZTHE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD ICHWAN (NIM : 10214087), RAFI Fisika Indonesia Final Project annealing, DC unbalanced magnteron sputtering, MoS2, structural properties. INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/30114 ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several field such as optoelectronics. Optoelectronics is a branch of technology that combines electronics and light. In this research, Sn doped ZnO thin film was grown by DC Unbalanced Magnetron Sputtering technique. In this final project report 1, there will be discussed about some characterisation methods such as scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), spectroscopy ellipsometry (SE) and UV-Vis spectroscopy. In the last chapter, some of the data and the future plan to finish this final project will be shown. text
institution Institut Teknologi Bandung
building Institut Teknologi Bandung Library
continent Asia
country Indonesia
Indonesia
content_provider Institut Teknologi Bandung
collection Digital ITB
language Indonesia
topic Fisika
spellingShingle Fisika
ICHWAN (NIM : 10214087), RAFI
THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
description ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several field such as optoelectronics. Optoelectronics is a branch of technology that combines electronics and light. In this research, Sn doped ZnO thin film was grown by DC Unbalanced Magnetron Sputtering technique. In this final project report 1, there will be discussed about some characterisation methods such as scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), spectroscopy ellipsometry (SE) and UV-Vis spectroscopy. In the last chapter, some of the data and the future plan to finish this final project will be shown.
format Final Project
author ICHWAN (NIM : 10214087), RAFI
author_facet ICHWAN (NIM : 10214087), RAFI
author_sort ICHWAN (NIM : 10214087), RAFI
title THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
title_short THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
title_full THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
title_fullStr THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
title_full_unstemmed THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
title_sort study of 2d material mos2 growth by dc unbalanced magnetron sputtering method
url https://digilib.itb.ac.id/gdl/view/30114
_version_ 1822923140528865280

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