THE STUDY OF 2D MATERIAL MoS2 GROWTH BY DC UNBALANCED MAGNETRON SPUTTERING METHOD
ZnO is a semiconductor materials with direct wide band gap. ZnO has wide band gap of 3.3 eV and exciton binding energy of 60 meV which make research topic about ZnO become popular for the last few decades. Those basic properties of ZnO make the materials have huge potential to be applied in several...
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Main Author: | ICHWAN (NIM : 10214087), RAFI |
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Format: | Final Project |
Language: | Indonesia |
Subjects: | |
Online Access: | https://digilib.itb.ac.id/gdl/view/30114 |
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Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
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