FABRIKASI SOI DENGAN METODA ELTRAN
<b>Abstract:</b><p align="justify"> <br /> <br /> <br /> Fabrication of SOI wafer was done using ELTRAN method with processes as follows: porous Si synthesis, epitaxial growth, oxidation, wafer bonding, grinding and etching. The key processes are ep...
Saved in:
| Main Author: | |
|---|---|
| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/4740 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b>Abstract:</b><p align="justify"> <br />
<br />
<br />
Fabrication of SOI wafer was done using ELTRAN method with processes as follows: porous Si synthesis, epitaxial growth, oxidation, wafer bonding, grinding and etching. The key processes are epitaxial growth over porous silicon.<p align="justify"> <br />
<br />
<br />
The XRD and SEM characterization to the SOI wafer shows that porous Si with pore diameter of 2 - 10 pm, synthesis time of 30 minutes and perpendicular expansion of 0.549 %, has a characteristic of monocrystalline. Since the crystal quality of epitaxial layer over the porous silicon is as good as that of crystalline silicon. The indicator is market up by the X-Ray Diffraction (cps) that reaches 329628.875000 at the angle (28) of 69.380592.<p align="justify"> <br />
<br />
|
|---|