FABRIKASI SOI DENGAN METODA ELTRAN
<b>Abstract:</b><p align="justify"> <br /> <br /> <br /> Fabrication of SOI wafer was done using ELTRAN method with processes as follows: porous Si synthesis, epitaxial growth, oxidation, wafer bonding, grinding and etching. The key processes are ep...
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id-itb.:47402006-03-15T11:41:07ZFABRIKASI SOI DENGAN METODA ELTRAN Sulardi Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/4740 <b>Abstract:</b><p align="justify"> <br /> <br /> <br /> Fabrication of SOI wafer was done using ELTRAN method with processes as follows: porous Si synthesis, epitaxial growth, oxidation, wafer bonding, grinding and etching. The key processes are epitaxial growth over porous silicon.<p align="justify"> <br /> <br /> <br /> The XRD and SEM characterization to the SOI wafer shows that porous Si with pore diameter of 2 - 10 pm, synthesis time of 30 minutes and perpendicular expansion of 0.549 %, has a characteristic of monocrystalline. Since the crystal quality of epitaxial layer over the porous silicon is as good as that of crystalline silicon. The indicator is market up by the X-Ray Diffraction (cps) that reaches 329628.875000 at the angle (28) of 69.380592.<p align="justify"> <br /> <br /> text |
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<b>Abstract:</b><p align="justify"> <br />
<br />
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Fabrication of SOI wafer was done using ELTRAN method with processes as follows: porous Si synthesis, epitaxial growth, oxidation, wafer bonding, grinding and etching. The key processes are epitaxial growth over porous silicon.<p align="justify"> <br />
<br />
<br />
The XRD and SEM characterization to the SOI wafer shows that porous Si with pore diameter of 2 - 10 pm, synthesis time of 30 minutes and perpendicular expansion of 0.549 %, has a characteristic of monocrystalline. Since the crystal quality of epitaxial layer over the porous silicon is as good as that of crystalline silicon. The indicator is market up by the X-Ray Diffraction (cps) that reaches 329628.875000 at the angle (28) of 69.380592.<p align="justify"> <br />
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| format |
Theses |
| author |
Sulardi |
| spellingShingle |
Sulardi FABRIKASI SOI DENGAN METODA ELTRAN |
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Sulardi |
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Sulardi |
| title |
FABRIKASI SOI DENGAN METODA ELTRAN |
| title_short |
FABRIKASI SOI DENGAN METODA ELTRAN |
| title_full |
FABRIKASI SOI DENGAN METODA ELTRAN |
| title_fullStr |
FABRIKASI SOI DENGAN METODA ELTRAN |
| title_full_unstemmed |
FABRIKASI SOI DENGAN METODA ELTRAN |
| title_sort |
fabrikasi soi dengan metoda eltran |
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https://digilib.itb.ac.id/gdl/view/4740 |
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