PENGARUH RAPAT KEADAAN CELAH ENERGI TERHADAP KARAKTERISTIK ID-VG AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT)
<b>Abstract:<p align=\"justify\"> <br /> The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific form...
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| المؤلف الرئيسي: | |
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| التنسيق: | Theses |
| اللغة: | Indonesia |
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://digilib.itb.ac.id/gdl/view/4821 |
| الوسوم: |
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| المؤسسة: | Institut Teknologi Bandung |
| اللغة: | Indonesia |
| الملخص: | <b>Abstract:<p align=\"justify\"> <br />
The effects of density of state (DOS) function on the ID-VG characteristic of amorphous silicon thin film transistor (a-Si TFT) was simulated. Transport equations of TFT were solved by using finite element method. A Specific formula was developed to calculate the drain current of TFT.<p align=\"justify\"> <br />
The effects of tail states and mid gap states of a-Si on ID-VG characteristic of TFT were also investigated. It was found that the tail states of a-Si strongly affected the drain current of TFT. The simulation carried out in this study is able to describe the performance of a-Si TFT. |
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