STUDI LANJUT FABRIKASI WAFER SILOCON-ON- INSULATOR (SOP) DENGAN METODE EPITAXIAL LAYER-TRANSFER (ELTRAN)

• Main Author: Oktofa Rachmawati, Dewi
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/4899
• Institution: Institut Teknologi Bandung

<b>Abstract:<p align="justify"> <br /> <br /> SOI wafer was prepared using Epitaxial-Layer-Transfer (SOI) method which involved several processes, i.e. : synthesis of porous silicon, epitaxial growth, oxidation, wafer bonding and etching process. The lattice expansion of porous silikon with 30 minutes synthesis time was 0,31%. With the lattice expansion 0,31%, the layer's have monocrystalline characteristic which used for silicon epitaxial growth. Characterization of silicon epitaxial layer show that it have fine grain with a diameter around 739 nm and the layer thickness 2,01 gm. X-ray Diffraction (XRD) pattern of silicon epitaxial layer show a peak (20) at 69,55° with correspond to (400) crystal plane. The oxide layers thickness of result wafer bonding.about 0,55µm was determined using scan electron microscopy (SEM) of the sample cross section. The surface energy of the wafer bonding is about 574,8 erg/cm2.<p align="justify">