STUDI PENGARUH LAPISAN PENYANGGA TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN METODE MOCVD BERBANTUAN PLASMA
<b>Abstract :</b><p align=\"justify\">The effect of the buffer layer thickness on GaN film which was grown by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) technique have been investigated. The buffer layer thickness were varied from 0 to 400 A. The GaN...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5075 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | <b>Abstract :</b><p align=\"justify\">The effect of the buffer layer thickness on GaN film which was grown by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) technique have been investigated. The buffer layer thickness were varied from 0 to 400 A. The GaN film grown without buffer layer has a mixture of crystallites oriented along (0002), (10-1 1) and (1120)and the films with buffer layer tend to have a single orientation (0002). The buffer layer improved the crystalline quality, morphology and Hall mobility of films. The optimum conditions of GaN films were taken on the GaN buffer layer thickness of 260 A. |
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