STUDI PENGARUH LAPISAN PENYANGGA TERHADAP KUALITAS FILM TIPIS GAN DITUMBUHKAN DENGAN METODE MOCVD BERBANTUAN PLASMA
<b>Abstract :</b><p align=\"justify\">The effect of the buffer layer thickness on GaN film which was grown by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) technique have been investigated. The buffer layer thickness were varied from 0 to 400 A. The GaN...
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/5075 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |