ANALYSIS OF BALLISTIC ELECTRON TRANSPORT IN DOUBLE-GATE MOSFET USING THE NON-EQUILIBRIUM GREEN’S FUNCTION METHOD

ANALYSIS OF BALLISTIC ELECTRON TRANSPORT IN DOUBLE-GATE MOSFET USING THE NON-EQUILIBRIUM GREEN’S FUNCTION METHOD

This study analyzes ballistic electron transport in Double-Gate (DG) Metal-OxideSemiconductor Field Effect Transistor (MOSFET) using the Non-Equilibrium Green's Function (NEGF) method combined with the Newton-Raphson technique to solve the Schrödinger and Poisson equations. The research aims...

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Bibliographic Details
Main Author: Charity Sangian, Messiah
Format: Theses
Language:Indonesia
Online Access:https://digilib.itb.ac.id/gdl/view/86874
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Institution: Institut Teknologi Bandung
Language: Indonesia

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https://digilib.itb.ac.id/gdl/view/86874

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