ANALYSIS OF BALLISTIC ELECTRON TRANSPORT IN DOUBLE-GATE MOSFET USING THE NON-EQUILIBRIUM GREENâS FUNCTION METHOD
This study analyzes ballistic electron transport in Double-Gate (DG) Metal-OxideSemiconductor Field Effect Transistor (MOSFET) using the Non-Equilibrium Green's Function (NEGF) method combined with the Newton-Raphson technique to solve the Schrödinger and Poisson equations. The research aims...
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| Main Author: | |
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| Format: | Theses |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/86874 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |