Ultra fine pitch Cu wire bonding on C45 ultra low k wafer technology

• Main Authors: Leng E.P., Siong C.T., Seong L.B., Leong P., Gunasekaran, Song J., Mock K.S., Siew C.W., Sivakumar, Kid W.B., Weily C.
• Other Authors: 26423002500
• Format: Conference paper
• Published: 2023
• Subjects: Aluminum; Bonding; Capillarity; Chip scale packages; Cost reduction; Electric conductivity; Electronic equipment manufacture; Hardness; Oxidation; Silicon wafers; Spheres; Technology; Testing; Thermal aging; Wire; Ball size; BGA package; Body sizes; Bond failure; Bond force; Bond pad; Bonding parameters; Bonding zone; Capillary design; Coated wires; Electrical conductivity; Electrical resistivity; Gold prices; Manufacturing performance; Pad damage; Peel strength; Placement accuracy; Process characterization; Sample sizes; Selection process; Semiconductor industry; Technology EDGE; Thermal aging tests; Ultra fine pitch; Ultra low-k; Wafer technology; Wire bonding; Wire bonds; Wire diameter; Wire surfaces; Wirebonder; Wafer bonding
• Institution: Universiti Tenaga Nasional

As gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonde...