CMOS SRAM circuit design and parametric test in nano-scaled technologies : process-aware SRAM design and test

• المؤلفون الرئيسيون: Pavlov, Andrei, Sachdev, Manoj.
• التنسيق: كتاب
• اللغة: English
• منشور في: Springer 2017
• الموضوعات: Metal oxide semiconductors, Complementary; Design.; Random access memory.; Nanoelectronics.; 621.38152
• الوصول للمادة أونلاين: http://repository.vnu.edu.vn/handle/VNU_123/27331; http://dx.doi.org/10.1007/978-1-4020-8363-1

Introduction and Motivation -- SRAM Circuit Design and Operation -- SRAM Cell Stability: Definition, Modeling and Testing -- Traditional SRAM Fault Models and Test Practices -- Techniques for Detection of SRAM Cells with Stability Faults -- Soft Errors in SRAMs: Sources, Mechanisms and Mitigation Te...